Groundbreaking ceremony for Anhui Gahe Semiconductor's gallium oxide base Held in Chizhou

On June 8, the groundbreaking ceremony for the gallium oxide R&D and production comprehensive base of Anhui Gahe Semiconductor Co., Ltd. was held in the Chizhou Economic and Technological Development Zone.

The base focuses on technological R&D and large-scale mass production of gallium oxide materials. It will continuously drive technological iteration and innovation, tackling core indicators such as substrate size scaling, defect density control, and manufacturing yield improvement. By establishing a complete path from R&D to commercial production, the base aims to accelerate the translation of new productive forces into tangible industrial outcomes.