Yunnan Germanium to invest in high-quality GaAs wafer project

Yunnan Germanium has approved a plan for its subsidiary, Yunnan Xinyao Semiconductor Materials Co., Ltd., together with investor Liu Guangzheng, to invest RMB50 million (USD7.02 million) in setting up Hubei Xinyao Semiconductor Materials Technology Co., Ltd., which will take the lead in developing a high-quality gallium arsenide (GaAs) wafer project.

With a total investment of RMB272 million (USD38.19 million) and a construction period of 18 months, the project will be located at the Huanggang High-Tech Industrial Development Zone in Hubei Province. It will include new plant facilities, supporting infrastructure, and the relocation of Yunnan Xinyao's existing GaAs wafer production line. Once operational, it will have an annual production capacity of 700,000 six-inch GaAs wafers, along with production lines for 30,000 4-6-inch semiconductor-grade quartz tubes and a dedicated R&D center.

Yunnan Xinyao mainly produces and sells GaAs and InP wafers. The company said the new project will strengthen its compound semiconductor business and enhance competitiveness and R&D capabilities.