Hangzhou Garen Semiconductor Co., Ltd. announced successful production of high quality 6-inch unintentionally doped and conductive gallium oxide (β-Ga2O3) single crystal by self-developed casting method and the processed 6-inch gallium oxide Gallium oxide substrate, with efforts from the Advanced Semiconductor Research Institute of ZJU-Hangzhou Global Scientific and Technological Innovation Center and State Key Laboratory of Silicon and Advanced Semiconductor Materials of Zhejiang University. Garen Semiconductor has become the first company capable of producing 6-inch gallium oxide (β-Ga2O3) single crystal substrate in China.

Gallium oxide (β-Ga2O3) is one of the most concerned ultra-wide bandgap semiconductor materials due to its excellent performance and low-cost manufacturing. It is mainly used for power devices, radio frequency devices and detector parts, and has broad application prospects in rail transit, smart grid, NEVs, PV power generation, 5G mobile communication, national defense and other fields.